Group blue LEDs

Group Ill-nitride DH blue LEDs were grown and fabricated on SiC substrates. The devices produce up to 1.8 mW of light with a dominant wavelength of 466 nm. The use of a conducting AlGaN buffer layer on SiC allows for true vertical current flow between the substrate and the nitride structure. The electrical and thermal conductivities of SiC make it a viable substrate material for heteroepitaxial nitride growth. 

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