Getter film, reactive deposition

Fig. 5.6. Reactive sputter process for depositing the compound film AB. (a) Balance of reactive gas flow Qtot, which is partially gettered at the target (Qt) and at the substrate (Qc) and partially pumped by the vacuum pump (Qp). The fraction of the target surface At that is covered by the compound AB is 6>t. The fraction of the collecting area Ac covered is Gc. j is the sputter current density, (b) Definition of particle fluxes that alter the target and collecting area coverage fractions 6>t and 6>c (see text), (modified from [70])...

When depositing reactive materials, the walls, fixturing, and shields in the deposition system can be arranged so as to provide getter pumping by the excess deposited film material. 

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