Germanium versus silicon

Figure 8.15 Plot of experimental and theoretical electron affinities of carbon silicon, germanium tin, and lead clusters versus number of atoms. The experimental data are from [12, 45-54],...

Silanes, germanes and silico-germanes. Log retention times versus number of silicon and/or germanium atoms. 

Figure 8. The amplitude of oscillation versus square root of ion-cnergy dependence for two multilayer systems consisting of silicon and germanium layers 2 nm and 3 nm thick, respectively.

Figure 18.16 plots the logarithm of the intrinsic carrier concentration n, versus temperature for both silicon and germanium. A couple of features of this plot are worth noting. First, the concentrations of electrons and holes increase with temperature because, with rising temperature, more thermal energy is available to excite electrons from the valence to the conduction band (per Figure 18.6h). In addition, at all temperatures, carrier concentration in Ge is greater than in Si. This effect is due to germanium s smaller band gap (0.67 vs. 1.11 eV, Table 18.3) thus, for Ge, at any given temperature, more electrons will be excited across its band gap.

Thus, a plot of Inw versus 1/T (K) should be linear and yield a slope of —Egl2k. Using this information and the data presented in Figme 18.16, determine the band gap energies for silicon and germanium and compare these values with those given in Table 18.3. 

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