Generation of charge carriers

The coefficients r and gn derive their names from recombination and generation of charge carriers in semiconductors, and are often denoted by pin and Xn in birth-and-death problems. 

The transition to a conductive state requires the generation of charge carriers and therefore thermal excitations of the disproportionation reaction... 

The excitons can react with the surface and, owing to the presence of absorbed oxygen, impurities and structural defects or due to electrode interactions may dissociate to produce separated electrons and holes. The probability of the generation of charge carriers will be higher for excitons created near the surface. The extrinsic exciton-surface mechanism may be distinguished from the direct process as follows ... 

The local superficial rate of electron-hole pair generation can be computed considering a wavelength averaged primary quantum yield for the generation of charge carriers on the catalytic surface... 

Only few reports try to get some informations about mobility n and number n of charge carriers156,207. From the low mobility fi of 10-10 em2 V V1 it may be assumed that the relative large value of a corresponds to the fact that the generation of charge carriers requires no energy and that the motion may be activated with increasing temperature. 

Generation of Charge Carriers and Charge Transport Experimental Methods... 

Generation of Charge Carriers and Charge Transport Experimental Methods 239 8.4.2.1 Intrinsic Charge Carrier Separation... 

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