Gallium surface distribution

Figure 2 The surface distribution of (A) aluminum, (B) gallium, and (C) zirconium and hafnium from coastal to open ocean regions in the North Pacific and western North Atlantic. Note the scale changes between oceans. In all panels, the coastal locations are plotted at the outside edges, with more oceanic locations in towards the middle. The data for Al and Ga in the eastern North Pacific are from 28°N 155°W to 36°N 123°W (Orians and Bruland, 1986, 1988b). For the Atlantic, the Ga data are from 37°N 75°W to 36°N 73°W (Orians and Bruland, 1988b), and the Al data are from Rhode Island, across the Gulf Stream, into the Sargasso Sea, then down toward the Caribbean (Measures et al, 1984, stations 0-1206). For Zr and FIf the western North Pacific data are from 38°N 146°E to 16°N 169°W, and in the eastern North Pacific from 50°N 145°W to 49°N 126°W (McKelvey and Orians, 1993 McKelvey, 1994).

Surface distributions (Figure 2B) show that eolian input is the dominant source of dissolved gallium to the surface ocean. The subsurface maximum seen in the Pacific is not an advective feature, but rather the result of internal cycles. The similarity in the ionic radii of gallium and iron, a known nutrient element, is thought to explain the subsurface maximum for gallium, which may be taken up along with iron in... 

Organometallic compounds can be incorporated into spun-on resist films either at the time of formation with even distribution or in a separate step after the resist has been applied to the substrate. For example, focused indium (146) or gallium (147) ion beams have been used to write a pattern directly on the resist surface. Subsequent plasma treatment then produced... 

A certain relationship, which exists between the bulk and surface properties of semiconducting materials and their electrochemical behavior, enables, in principle, electrochemical measurements to be used to characterize these materials. Since 1960, when Dewald was the first to determine the donor concentration in a zinc oxide electrode using Mott-Schottky plots, differential capacity measurements have frequently been used for this purpose in several materials. If possible sources of errors that were discussed in Section III.3 are taken into account correctly, the capacity method enables one to determine the distribution of the doping impurity concentration over the surface" and, in combination with the layer-by-layer etching method, also into the specimen depth. The impurity concentration profile can be constructed by this method. It has recently been developed in greatest detail as applied to gallium arsenide crystals and multilayer structures. 

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