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GaAsP semiconductors

What is the minimum value for the band gap of a GaAsP semiconductor if a 680 nm photon is required to generate a mobile electron-hole pair For what portion of the eiectromagnetic spectrum would this material possibly be suitable as a photodiode ... [Pg.269]

Arsenic (As), 3 262-274. See also GaAsP system Gallium arsenide (GaAs) semiconductor InGaAsP entries Indium-gallium-arsenside (InGaAs) photodiodes... [Pg.71]

See also Gallium arsenide (GaAs) semiconductor GaAsP system... [Pg.388]

Phosphorus (P), 19 1-19. See also GaAsP system Gallium phosphide (GaP) semiconductor InGaAsP alloy Organophosphorus extractants Phosphate fertilizers atomized, 18 820... [Pg.698]

The success of piezospectroscopy experiments in the above materials strongly suggests the application to other indirect gap binary semiconductors such as AlSb, AlAs, etc. as well as indirect alloy materials such as GaAlAs, GaAsP, etc. In addition, information about intervalley EP and HP scattering matrix elements could also be obtained from ultra high pressure experiments (such as in a diamond anvil cell) where a direct gap material, such as GaAs, can be made indirect. [Pg.490]

See other pages where GaAsP semiconductors is mentioned: [Pg.163]    [Pg.163]    [Pg.281]    [Pg.112]    [Pg.112]    [Pg.119]    [Pg.424]    [Pg.330]    [Pg.1]    [Pg.396]    [Pg.396]    [Pg.230]    [Pg.281]    [Pg.134]    [Pg.3707]    [Pg.9]    [Pg.330]    [Pg.1]    [Pg.246]    [Pg.3706]    [Pg.84]    [Pg.3]    [Pg.460]    [Pg.4221]    [Pg.230]   


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