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GaAs growth mechanism, electronic

P Ruppert, D Hommel, T Behr, H Heinke, A Waag, G Landwehr. Molecular-beam epitaxial-growth mechanism of ZnSe epilayers on (100) GaAs as determined by reflection high-energy electron-diffraction, transmission electron-microscopy and x-ray-diffraction. J Crystal Growth 138 48-54, 1994. [Pg.550]

See other pages where GaAs growth mechanism, electronic is mentioned: [Pg.235]    [Pg.401]    [Pg.158]    [Pg.17]    [Pg.400]    [Pg.48]    [Pg.402]    [Pg.256]    [Pg.6]    [Pg.269]    [Pg.365]   


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Electron mechanisms

GaAs growth

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