Fullerenes OFETs

Langmuir-Blodgett (LB) technique has been also used for the preparation of Pc-based OFET, as it allows the fine control of both the structure and the thickness of the film at the molecular level [226,227], OFET devices based on amphiphilic tris(phthalocyaninato) rare earth, triple-decker complexes have been prepared by LB technique, showing good OFET performances [228], More recently, ambipolar transport has also been realized in OFET devices through a combination of holeconducting CuPc and n-conducting Cgo fullerene, in which the asymmetry of the... 

This section focuses on the relationship between the microstructure of polymer fullerene blends and the measured properties of OFETs formed from these systems. Despite the experimental data presented within this chapter being restricted to polymer fullerene blends, it will become apparent that the phenomena and techniques discussed here are relevant for other semiconductor composites also. 

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