Fractional interstitialcy components

Calculations of the fractional interstitialcy components for B, P, As, and Sb are shown in Table I (33, 39-42). A significant spread in the values of/, is obtained. The value of / has been correlated with the amount of energy required to make a substitutional dopant atom become interstitial. Energies of interstitial formation in Si are shown in Table II. The larger the energy... 

Table I. Fractional Interstitialcy Components of Diffusion via Self-Interstitials in Silicon at 1000-1100 °C...

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