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Flat Mott-Schottky plot curving

Pig. 10-18. (a) PolarizatioD curves of anodic dissolution and (b) Mott-Schottky plots of an n-type semiconductor electrode of molybdenum selenide in the dark and in a photo-excited state in an acidic solution C = electrode capacity (iph) = anodic dissolution current immediately after photoexdtation (dashed curve) ipb = anodic dissolution current in a photostationary state (solid curve) luph) = flat band potential in a photostationary state. [From McEv( -Etman-Memming, 1985.]... [Pg.345]

As an example, for SCATD 1021 cm 3 and lOpFcm-2, the intercept according to the above analysis is shifted by ca. 70 mV. As Uosaki and Kita show by direct numerical calculation [67], for extreme values of exNd the Mott-Schottky plots are actually curved near flat-band. [Pg.102]

Fig. 3.18 Mott-Schottky plots of Si-doped (curves a-c) and undoped (curve d) mesoporous hematite photoanode. The capacitances for curves a, b, and c are obtained from an Si-doped sample and models a, b, and c, respectively, shown in the inset of the left-hand plot. Curve d is obtained from the undoped film and model a (series RC). The dashed lines connecting the data points represent the variable active surface area fit. Sketches e-g depict the development of the space-charge layer in a mesoporous semiconductor as function of applied potential, illustrating a decrease in active surface area at advancing space-charge layer width in two dimensions, (e) Near flat band potential with maximum surface area, (f) Total depletion of smaller feature at increased bias potential, (g) Decreased active surface area in concave curved surface. Reprinted with permission from ref. [57], copyright, 2009 American Chemical Society... Fig. 3.18 Mott-Schottky plots of Si-doped (curves a-c) and undoped (curve d) mesoporous hematite photoanode. The capacitances for curves a, b, and c are obtained from an Si-doped sample and models a, b, and c, respectively, shown in the inset of the left-hand plot. Curve d is obtained from the undoped film and model a (series RC). The dashed lines connecting the data points represent the variable active surface area fit. Sketches e-g depict the development of the space-charge layer in a mesoporous semiconductor as function of applied potential, illustrating a decrease in active surface area at advancing space-charge layer width in two dimensions, (e) Near flat band potential with maximum surface area, (f) Total depletion of smaller feature at increased bias potential, (g) Decreased active surface area in concave curved surface. Reprinted with permission from ref. [57], copyright, 2009 American Chemical Society...
Figure 4.3.15. Mott-Schottky plots of the space charge capacitance (curve 1) as derived from data like those shown in Figure 4.3.9a and the capacitance associated with the high-frequency response, Q (curve 2) derived from data like those shown in Figure 4.3.96. The flat-band potential is the same in both cases (0.69 V), but the doping level, as calculated from the slope of the lines, is an order of magnitude lower for curve 2 (polished + etched + oxidized sample) than for curve 1 (polished + etched sample). (Shen et al. [1986]). Reprinted by permission of the publisher, The Electrochemical Society, Inc. Figure 4.3.15. Mott-Schottky plots of the space charge capacitance (curve 1) as derived from data like those shown in Figure 4.3.9a and the capacitance associated with the high-frequency response, Q (curve 2) derived from data like those shown in Figure 4.3.96. The flat-band potential is the same in both cases (0.69 V), but the doping level, as calculated from the slope of the lines, is an order of magnitude lower for curve 2 (polished + etched + oxidized sample) than for curve 1 (polished + etched sample). (Shen et al. [1986]). Reprinted by permission of the publisher, The Electrochemical Society, Inc.

See also in sourсe #XX -- [ Pg.102 ]




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