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Fermi hole HOMO highest energy occupied

An important issue for the performance of an organic electronic device like an OFET is the injection of charge carriers, electrons or holes, from the electrode into the organic material. In case of the commonly used metal electrodes an efficient electron injection is possible only if the Fermi level of the metal and the energy of the lowest unoccupied molecular orbital (LUMO) of the organic material differs by a small amount only. A similar statement applies for hole injection, in this case the position of the highest occupied molecular orbital (HOMO) has to match with the position of the Fermi level. When noble metals, in particular Au, are being used for an electrode one may naively assume... [Pg.208]


See other pages where Fermi hole HOMO highest energy occupied is mentioned: [Pg.35]    [Pg.118]    [Pg.236]    [Pg.212]    [Pg.72]    [Pg.34]    [Pg.580]    [Pg.66]    [Pg.607]    [Pg.1587]    [Pg.138]    [Pg.64]    [Pg.619]   
See also in sourсe #XX -- [ Pg.175 , Pg.266 , Pg.275 ]




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