Experimental results for critical thickness

An effective technique for examining the critical thickness concept was developed by Tuppen and Gibbings (1989). The technique was based on detecting the threading segment at the end of an interface misfit dislocation, where the dislocation line turns from the interface toward the free surface of 

It has been observed experimentally that the formation of Shockley partial dislocations separated by stacking faults is much more common in diamond cubic epitaxial films in some crystallographic orientations than it is in other orientations 

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