Example Dislocation control in semiconductor films

The stress associated with the elastic strain induced in heteroepitaxial material systems with lattice mismatch provides a driving force for the formation and growth of strain-relieving dislocations. In some device applications, it is essential that the induced strain be maintained because of its influence on functional characteristics. For cases involving significant mismatch strain, the critical thickness condition for 

Specific device configurations in which curtailment of misfit dislocation formation enhances performance are the heterojunction bipolar transistor and the modulation doped field effect transistor. In order to suppress misfit dislocation for- 

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