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Electronic phase diagram

The identification and study of colossal magnetoresistance (CMR) materials could be amenable to combinatorial-style searches. Such approaches could be useful for elucidating the structural and electronic phase diagrams of these fascinating materials. Ultimately this could help sort out the apparently complex physics that underlies their behavior. An indication of the value of these approaches was recently provided by Xiang et al. [21]... [Pg.172]

Ishiguro T, Ito H, Yamauchi Y, Ohmichi E, Kubota M, Yamochi H, Saito G, Kartsovnik MV, Tanatar MA, Sushko YV, Logvenov GY (1997) Electronic phase diagrams and Fermi surfaces of k-(ET)2X, the high T organic superconductors. Synth Met 85 1471-1478... [Pg.118]

Fig. 11 Schematic electronic phase diagram of C q compounds, showing the approximate location of the metal (superconducting)-insulator phase boundary. Open symbols are values of Tc for superconducting fullerides solid symbols indicate TN (ambient pressure) and Tc (>1 GPa) of (NH3)K3C60... Fig. 11 Schematic electronic phase diagram of C q compounds, showing the approximate location of the metal (superconducting)-insulator phase boundary. Open symbols are values of Tc for superconducting fullerides solid symbols indicate TN (ambient pressure) and Tc (>1 GPa) of (NH3)K3C60...
Fig. 16 Schematic electronic phase diagram of C, compoimds, including the evolution of the Neel temperature, TN (open squares) for the family (NH3)K3 IRbIC60 (0 Fig. 16 Schematic electronic phase diagram of C, compoimds, including the evolution of the Neel temperature, TN (open squares) for the family (NH3)K3 IRbIC60 (0<x<3)...
Figure 7.5. An electronic phase diagram illustrating the location of a metallic regime, at low U (Coulomb repulsion energy) and B (disorder), where dp/dT > 0. With increasing U and/or B. the system becomes nonmetallic (dp/dT< 0) but may still exhibit Pauli paramagnetism if there is no band gap U B). Figure 7.5. An electronic phase diagram illustrating the location of a metallic regime, at low U (Coulomb repulsion energy) and B (disorder), where dp/dT > 0. With increasing U and/or B. the system becomes nonmetallic (dp/dT< 0) but may still exhibit Pauli paramagnetism if there is no band gap U B).
Fig. 2. Commonly observed electronic phase diagram of the high-temperature superconductors. The superconducting (SC) region spreads over the hole concentration p per CuOj unit from 0.05 to 0.28, showing the maximum at 0.15. Below p=0.02, the antiferromagnetic (AF) phase is obtained. To is die temperature below vshich various properties show anomalies with respect to the Fermi hquid, while below T a gap is thought to open up in the spin excitation spectrum. Fig. 2. Commonly observed electronic phase diagram of the high-temperature superconductors. The superconducting (SC) region spreads over the hole concentration p per CuOj unit from 0.05 to 0.28, showing the maximum at 0.15. Below p=0.02, the antiferromagnetic (AF) phase is obtained. To is die temperature below vshich various properties show anomalies with respect to the Fermi hquid, while below T a gap is thought to open up in the spin excitation spectrum.
Construction of Electronic Phase Diagrams Reentrant Metallic Behavior... [Pg.333]

Lin Z, Wu J, Duan WH, LagaUy MG, Feng L. Electron phase diagram of single-element silicon strain superlattice. Phys Rev Lett 2010 105 016802-4. [Pg.123]

Figure Al.3.23. Phase diagram of silicon in various polymorphs from an ab initio pseudopotential calculation [34], The volume is nonnalized to the experimental volume. The binding energy is the total electronic energy of the valence electrons. The slope of the dashed curve gives the pressure to transfomi silicon in the diamond structure to the p-Sn structure. Otlier polymorphs listed include face-centred cubic (fee), body-centred cubic (bee), simple hexagonal (sh), simple cubic (sc) and hexagonal close-packed (licp) structures. Figure Al.3.23. Phase diagram of silicon in various polymorphs from an ab initio pseudopotential calculation [34], The volume is nonnalized to the experimental volume. The binding energy is the total electronic energy of the valence electrons. The slope of the dashed curve gives the pressure to transfomi silicon in the diamond structure to the p-Sn structure. Otlier polymorphs listed include face-centred cubic (fee), body-centred cubic (bee), simple hexagonal (sh), simple cubic (sc) and hexagonal close-packed (licp) structures.
And now for a real phase diagram. We have chosen the lead-tin diagram (Fig. 3.1) as our example because it is pretty straightforward and we already know a bit about it. Indeed, if you have soldered electronic components together or used soldered pipe fittings in your hot-water layout, you will already have had some direct experience of this system. [Pg.26]

Figure 4-247. Principle of the continuous wave system (a) sketch of the siren and electronic block diagram (b) principle of the coding by phase shift keying. (Courtesy Anadrill [106].. ... Figure 4-247. Principle of the continuous wave system (a) sketch of the siren and electronic block diagram (b) principle of the coding by phase shift keying. (Courtesy Anadrill [106].. ...
The Cd-Na phase diagram, established with 5-85 wt% Na, shows two inter-metallic phases, NaCdj and Na2Cd,. The latter was earlier reported as either NaCds or NaCdg, but more recent work indicates a cubic structure isomorphous with MgjZn,] in which some electron transfer occurs between the two types of atom . ... [Pg.423]


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