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Electron capture creating thermal electrons

Here X is a surface state that is occupied by an electron and is therefore able to capture a hole. Xf is the vacant state created that is now able to accept an electron from the conduction band. The surface concentration of X will depend on the total surface density of surface states and their electron occupancy. The rate constants for hole and electron capture, (3p and f can be defined as the products of the thermal velocities, vp and v and the capture cross sections ap and tr of X and X+. [Pg.235]


See other pages where Electron capture creating thermal electrons is mentioned: [Pg.526]    [Pg.591]    [Pg.101]    [Pg.651]    [Pg.38]    [Pg.307]    [Pg.50]    [Pg.204]    [Pg.578]    [Pg.119]    [Pg.86]    [Pg.2]    [Pg.85]    [Pg.645]    [Pg.514]    [Pg.175]    [Pg.342]    [Pg.268]    [Pg.883]   
See also in sourсe #XX -- [ Pg.347 ]

See also in sourсe #XX -- [ Pg.372 ]




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Thermal electron capture

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