Electrode-oxide semiconductor junction barrier

The electron temperature was measured by superconductor-semiconductor-superconductor (S-Sm-S) junctions with Schottky barrier [7], In the S-Sm-S structure the quasiparticle tunneling across the junction is very sensitive to the electron temperature in the normal electrode and it can be used as an electron temperature probe with negligible heat leak. Bias current used for electron temperature measurements was few orders of magnitude smaller than the current used for the electron heating in Si film and therefore the possible heating by the bias current can be neglected. The S-Sm-S thermometers used in experiments were calibrated against the ruthenium oxide thermometer (see inset in Fig. 1). 

The large effect of electric locking by the oxygen is supposedly linked to the presence of metallic electrodes set at each tip of the semiconductor. However, with such a setup the electric currents are chaimeled through the surface of the electrodes, the blocking effect could be attributed to a junction effect between the metal and the oxide, which is represented by a Schottky barrier adjusted by oxygen pressure. 

A bipolar gap direct ohmic photoelectro-chemical system comprises either a bipolar band gap pnpn/electrolyte ohmic photo-electrochemical cell, with reduction occurring at the photoelectrode-electrolyte interface and regenerative oxidation occurring at the electrolyte-counter electrode (anode) interface or alternately a npnp/electrolyte bipolar band gap with oxidation occurring at the semiconductor-electrolyte interface and regenerative reduction occurring at the electrolyte-counter electrode interface. In the bipolar gap direct ohmic photoelectro-chemical system, direct refers to the direct contact between semiconductor and solution, and ohmic indicates this interface is an ohmic rather than a Schottky junction. This facilitates study of several characteristics of bipolar multiple band gap systems, without the added complication of simultaneous parameterization of a direct Schottky barrier at the electrolyte interface. 

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