Electrical Properties of Ion Implanted and Annealed GaN

The Mg-implanted samples in FIGURE 1 do not show a conversion to p-type material for any annealing temperature and closely track the unimplanted material. However, the Mg-samples coimplanted with P show a conversion from n-type to p-type at 1050°C with an increase in hole concentration at the high temperature. The success in realising p-type material with the P co-implanted samples is attributed to the P acting to either (a) create additional Ga-vacancies, via additional implantation damage, for the Mg to occupy as acceptors, or (b) reduce the number of N-vacancies and thereby also increase the probability of Mg occupying the preferred Ga-sublattice [4], 

FIGURE 1 Sheet resistance versus annealing temperature for unimplanted, Si-, Mg-, and Mg+P-implanted GaN (after [3]). 

FIGURE 3 Sheet electron concentration versus dose for 100 keV Si-implanted GaN annealed at 1100°C (after [7]). 

---

B3.2 Impurity redistribution of implanted and annealed GaN B3.3 Electrical properties of ion implanted and annealed GaN B3.4 Optical properties of implanted GaN... 

---