Lower oxides electrical properties

Matsubayashi et al. revealed donor abilities of the unsymmetrical diimine-dithiolene complexes [11-14]. The unsymmetrical complexes provided cation radical salts with various anions including I3, Br3 and TCNQ by use of chemical oxidation [11-14]. The electrical resistivities of the cation radical salts measured with their compressed pellets at room temperature are summarized in Table 1. The electrical resistivities of the dmit complexes were very high. The cation radical salts of the CgH4Sg-complexes, which have the BEDT-TTF moiety [22, 23], exhibited lower resistivity than those of dmit complexes, except for [(Bu-pia)Pt(CgH4Sg)] salts. However, crystal structures of these salts were not reported, and details of their electrical properties and electronic states were not discussed based on their crystal structures. 

Silicones possess both thermal stability and good mechanical, chemical, and electric properties between —70 and 250 C. In the absence of oxygen, many linear siloxanes degrade at temperatures greater than 350 C to give cyclic products. Oxidative degradation generally occurs at lower temperatures. 

Various electrical and optical properties that have been measured for the wet thermal oxide on silicon carbide are summarised in TABLE 3. In general, no systematic variation of any of the oxide properties has been reported with oxide growth temperature in the range of 1000 to 1250°C. However, oxide grown with a wet process has been shown to have lower oxide charges than oxide grown in dry oxygen. Variations in the measured electrical properties... 

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