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Effects of defect anisotropy

The influence of anisotropy of acceptor wavefunction upon tunnelling luminescence kinetics was treated in [104]. The conclusion was drawn that for the static tunnelling luminescence it just results in the redefinition of the (Jo parameter. However, we are interested here in the non-steady-state kinetics and shall demonstrate below that, particularly at this stage, anisotropic recombination reveals distinctive behaviour which allows us to identify it. [Pg.225]

Since the actual angular dependence of the a r) is rather complicated (e.g., [105]), Rogulis [106] has used the following simple approximation [Pg.225]

Kinetics of the tunnelling recombination depends greatly upon the defect mobility (whether a static tunnelling luminescence regime at low temperatures or the diffusion-controlled regime arising at higher temperatures when defects become mobile) and their spatial distribution. [Pg.225]

For the static tunnelling luminescence decay and correlated defect distribution the joint density of dissimilar defects is governed by equations (4.1.40) to (4.1.42). [Pg.226]

The conclusion was drawn above that for the isotropic case the exponentially falling defect distribution results in I t) oc as in equa- [Pg.226]


See other pages where Effects of defect anisotropy is mentioned: [Pg.225]    [Pg.225]   


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