Effect of Silicon Substrate

There are few data on the effect of substrate on the formation of anodic oxide. In 2M KOH, the formation characteristics of anodic oxides on (100) and (111) surfaces in the potential range from 6 to 15V are the same. Ion implantation of substrate silicon has been found to greatly affect the anodization behavior of silicon. An increase in the anodization rate occurs after implantation of C, N , P, As , Ar,  

FIGURE 3.10. Vo-log/ characteristics of locally Ar implanted Si in comparison with unimplanted n-type silicon (Vo is the cell voltage at the beginning of anodization at constant current 7). (Reprinted from Mende et al. 1994, with permission from Elsevier Science.) 

---

Figures 2.35 and 2.36 show the effect of silicon substrate conditions on OCP in an alkaline solution. For the p-type materials, OCP appears to be lower at high doping levels with no clear difference between different orientations. For n-type materials.

---