Doped semiconductor nanocrystals spectroscopy

A similar result has been found using Raman spectroscopy of core-shell nanocrystals. Like XRD, Raman spectroscopy has also been widely employed to study doping of bulk semiconductors (110-112) but so far has only rarely been applied to doped semiconductor nanocrystals (70). Analogous to Vegard s law, shifts in lattice Raman vibrational energies have been found to occur with increasing dopant concentration in both the bulk and nanocrystalline materials. 

Quantum dots represent three-dimensional confinement in semiconductor materials. The optical spectroscopy of lanthanides-doped III-V semiconductor QDs has been observed to be very different from the bulk or thick film. For example, carrier confinement in QDs can strongly enhance the radiative quantum efficiency of the lanthanide emission, which thus makes lanthanide-doped III-V semiconductor QDs very promising candidates for full-color LEDs. It is notoriously difficult to dope lanthanide into III-V semiconductor nanocrystals by wet chemical synthesis methods. To date, most of these samples were prepared either by MBE, ion implantation or magnetron co-sputtering. 

Spectroscopy of lanthanide ions doped in insulating nanocrystals 4.1. Site-resolved luminescence spectra 112 112 5.6. Lanthanides doped in other semiconductor nanocrystals 147... 

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