Doped semiconductor nanocrystals films

Quantum dots represent three-dimensional confinement in semiconductor materials. The optical spectroscopy of lanthanides-doped III-V semiconductor QDs has been observed to be very different from the bulk or thick film. For example, carrier confinement in QDs can strongly enhance the radiative quantum efficiency of the lanthanide emission, which thus makes lanthanide-doped III-V semiconductor QDs very promising candidates for full-color LEDs. It is notoriously difficult to dope lanthanide into III-V semiconductor nanocrystals by wet chemical synthesis methods. To date, most of these samples were prepared either by MBE, ion implantation or magnetron co-sputtering. 

In 2010, Tran et al. [41] prepared (100-x)Si02-xSn02 (x = 12-60 mol%) glass-ceramic thin films and waveguides by sol-gel processing. In order to focus the study on the effect of the semiconductor species, these systems were not doped with rare earth ions. Sn02 nanocrystals were nucleated in the silica glassy... 

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