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Dissolution anisotropy, silicon

As expected from the anisotropy of chemical etching of Si in alkaline solutions, the electrochemical dissolution reaction shows a strong dependence on crystal orientation. For all crystal orientations except (111) a sweep rate independent anodic steady-state current density is observed for potentials below PP. For (111) silicon electrodes the passivation peak becomes sweep rate dependent and corresponds to a constant charge of 2.4 0.5 mCcm-2 [Sm6]. OCP and PP show a slight shift to more anodic potentials for (111) silicon if compared to (100) substrates, as shown in Fig. 3.4. [Pg.50]


See other pages where Dissolution anisotropy, silicon is mentioned: [Pg.29]    [Pg.178]    [Pg.313]    [Pg.713]    [Pg.714]    [Pg.130]    [Pg.480]    [Pg.478]    [Pg.350]   
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