Dislocation Types in -GaN

To study the character of the dislocations present in the a-plane GaN films, HVPE-grown films were analyzed in cross-section, as well as in plan-view geometry by conventional and high-resolution transmission electron microscopy (HRTEM). The dislocation density was determined to be (1-2) X 10 cm and almost all the dislocations were found to bound BSFs as 

298 I 7 7 Defects and Inteifacial Structure of a-plane CaN on r pfane Sapphire 11120] 

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