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Direct measurement of surface recombination

The direct measurement of surface recombination is not a straightforward task since both theoretical and experimental assumptions must be made. In an early, but extensive discussion, Memming [137] used the following theoretical assumptions to relate surface recombination to directly measurable currents. [Pg.169]

At the surface, the change in carrier concentrations on illumination or other perturbation, Sns and Sps are not equal in fact, we assume [Pg.170]

Inserting the values of natr, pstr, dns and Sps and remembering that [Pg.170]

These equations predict that the effective surface recombination rate, st, decreases as fin0 increases e.g. as the light intensity increases, st should decrease, which corresponds to the Gerischer case (a)- (c) transition, above. [Pg.171]

To verify this relationship, Memming constructed the ingenious cell shown schematically in Fig. 62. If an excess of minority carriers exists at x = W, then a short-circuit current is flows at the p-n junction whose magnitude is given by. [Pg.171]


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