DIP on Silicon Oxide

Growth of DIP molecules was studied in eonsiderable detail [44, 68, 69]. When prepared under suitable conditions organic thin films of DIP deposited on silicon oxide exhibit high structural out-of-plane order [44]. The films form large flat terraces with a step height eorresponding to the lattiee spacing 

Perylene-tetracarboxylicacid-dianhydride (PTCDA) is among the most thoroughly studied organie semieonduetors [20-22, 72-84], both in the mono-layer and multilayer regime. 

250 K). (b) Interface ronghness a in units of monolayers (ML) as obtained from Monte Carlo simulations at different 

Below we discuss selected examples of more complex layer stmetures, which are essential for organic based devices. 

Metal contacts are one obvious requirement for many applications of organic semiconductors. It turns out that the controlled deposition of metals on organics, e.g. as top electrode , is non-trivial. In order to reduce problems related to interdiffusion (and ultimately short-circuiting) and traps related to surface states, different strategies can be pursued  

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Figure 9.10 TEM image showing a well-defined heterostmcture of aluminium oxide on DIP on silicon oxide together with the monolayered stmcture of the organic film (inset). With permission from Ref. [114],...

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