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Dimers surface alignment

Fig. 79. The stmcture of the Si(100)2xl-Sb surface, (a) 50x50 empty state STM image of the Si(100)2xl-Sb surface formed by annealing of 0.6 ML Sb at 820 K. The surface comprises the array of the Sb dimer rows. The brighter areas are Sb dimers of the second Sb layer. The surface is characterized by a high density of defects, voids (seen as dark regions) and anti-phase domain boundaries, (b) The registry of the Sb dimers observed by STM relative to the clean Si(100)2xl surface. The Sb dimers are aligned perpendicular to the Si dimers and form rows that run parallel to the Si dimer direction [90R4]. Similar stmcture is formed in Te/Si(100) system. Fig. 79. The stmcture of the Si(100)2xl-Sb surface, (a) 50x50 empty state STM image of the Si(100)2xl-Sb surface formed by annealing of 0.6 ML Sb at 820 K. The surface comprises the array of the Sb dimer rows. The brighter areas are Sb dimers of the second Sb layer. The surface is characterized by a high density of defects, voids (seen as dark regions) and anti-phase domain boundaries, (b) The registry of the Sb dimers observed by STM relative to the clean Si(100)2xl surface. The Sb dimers are aligned perpendicular to the Si dimers and form rows that run parallel to the Si dimer direction [90R4]. Similar stmcture is formed in Te/Si(100) system.
What then, is the expression for gdipole in the charge region between these extreme cases We know that in this in-between region it is more likely that there will be a mixture of flip-up and flop-down water molecules. Not all of the monomers are aligned in the same direction, and their individual contribution to the surface potential equations should be considered. And what about the dimers Are they not also present... [Pg.188]

For the elementary group IV semiconductor (001) surfaces there are in principle 3 plausible adsorption sites for ad-dimers on-top of the substrate rows with the dimer bond of the ad-dimer either parallel (A configuration) or perpendicular (B configuration) to the substrate dimer bonds and a third adsorption site in the trough with the dimer bond of the ad-dimer aligned parallel to the substrate dimer bonds (C configuration). For Ge/Ge(0 01) and Ge/Si(0 01) ad-dimers is also some intermediate configuration on-top of the substrate dimer rows labeled A/B. Whether this is really a stable adsorption site or just due to the fact that the ad-dimer rapidly rotates back and forth from A to B and vice versa is not yet settled. [Pg.348]

It is clear that at the single-dimer site, the most stable adsorption configuration is S . The chemisorption process takes advantage of two cycloaddition reactions to support the adhesion of fullerene on the c(4 x 4) reconstructed GaAs(OOl) surface. Nevertheless, due to the initial structural alignment prior to the energy minimization,... [Pg.542]

The C. officinalis VBrPO is a hexamer of dimers with 595 amino acids per monomeric unit. A. nodosum contains two VBrPOs, AnI (inside the thallus) and Anil (at the thallus surface). The well-characterized AnI is a homodimer with 551 amino acids per unit. The VClPO of C. inaequalis is a monomer, built up of 609 amino acids. The active centers of the peroxidases lie at the bottom of a 15-20 A deep cleft, which is aligned by hydrophilic and hydrophobic amino acid residues. In addition to the covalent bond to a proximal His, vanadate is linked... [Pg.2136]

In the case of anisotropic molecules on a homeotropically aligning surface, an orientation of the molecules perpendicular to the surface is sterically favored. 8CB shows a surface-induced orientation perpendicular to the surface without (prenematic alignment) or with layers (presmectic alignment) as sketched in Fig. 2. In the nematic and smectic phase 8CB self-assembles into dimers [13]. [Pg.41]


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See also in sourсe #XX -- [ Pg.540 ]

See also in sourсe #XX -- [ Pg.540 ]




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Dimerization surface

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