Diffusion high temperature, wafer fabrication

The diffusion mechanisms of dilute Fe atoms in semiconductors are currently one of the most important topics in solid-state physics and related applications. Dilute impurity Fe atoms aregenerallythoughtto occupy only interstitial sites in Si, resulting in rapid diffusion. Fe atoms usually contaminate Si via diffusion annealing and quenching from high temperatures during fabrication of Si wafers. The nature of Fe impurities has been evaluated at low temperatures in such samples. The nature of Fe impurities were then evaluated at low temperature in such samples that must contain differently distributed and/or clustered Fe atoms. 

---