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Device structure intrinsic region

Polymer LED in the p-i-n structure From the previous descriptions, we conclude that the structure ITO SSA (or PEDOT)/MEH-PPV/Ca/Al indeed comprises of a p-i-n structure made up of three regions a p-doped region, an intrinsic region, and a n-doped region. This observation will be useful in designing device structures that yield the best device performance. We describe the device structure as the following ... [Pg.140]

See other pages where Device structure intrinsic region is mentioned: [Pg.226]    [Pg.426]    [Pg.141]    [Pg.33]    [Pg.108]    [Pg.373]    [Pg.154]    [Pg.558]    [Pg.282]    [Pg.226]    [Pg.2860]    [Pg.35]    [Pg.215]    [Pg.121]    [Pg.112]    [Pg.87]    [Pg.802]    [Pg.299]    [Pg.281]    [Pg.874]    [Pg.89]    [Pg.119]    [Pg.386]    [Pg.234]    [Pg.372]   
See also in sourсe #XX -- [ Pg.140 ]



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