Deprotection kinetics of alicyclic

The methodologies reported here follow from U. Okoroanyanwu, J.D. Byers, T. Cao, S.E. Webber, and C.G. Willson, Deprotection kinetics of alicyclic polymer resist systems designed for ArF (193 nm) lithography, in Polymers for Micro and Nano Patterning Science and Technology, H. Itoh, E. Reichmanis, O. Nalamasu, and T. Ueno, Eds., pp. 174 190, American Chemical Society, Washington, DC (1998). 

Deprotection Kinetics of Alicyclic Polymer Resist Systems Designed for ArF (193 nm) Lithography... 

The deprotection kinetics of alicyclic polymer resist systems designed for 193 nm lithography was examined using JR and fluorescence spectroscopic techniques. A kinetic model was developed that simulates the deprotection of the resists fairly well. A new, simple, and reliable method for monitoring photoinduced acid generation in polymer films and in solutions of the kind used in 193 nm and deep-UV lithography was developed. This technique could find application in the study of diffusional processes in thin polymer films. 

Infrared spectroscopy provides a convenient method for studying the deprotection kinetics of resist polymers. For example, the deprotection kinetics of some alicyclic polymer resist systems comprising (i) poly(methylpropyl bicyclo[2.2.1]-hept-5-ene-2-carboxylate-co-bicyclo[2.2.1]hept-5-ene-2-carboxylic acid) (trivial name poly(carbo-t-butoxynorbomene-co-norbornene carboxylic acid) [poly(CBN-co-NBCA)] (I) and (ii) poly(methylpropyl bicyclo[2.2.1]hept-5-ene-2-carboxylate-co-maleic anhydride) (trivial name poly(carbo-t-butoxynorbomene-co-maleic anhydride) [poly(CBN-aZr-MAH)] (11) and containing triphenylsulfonium... 

Infra-red spectroscopy and fluorescence spectroscopy provide convenient methods for studying these processes. Using FTIR, we investigated the deprotection kinetics of some of our alicyclic polymer resist systems (2,3) (containing triphenylsulfonium hexafluoroantimonate) that were exposed to 248 and 193 nm... 

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