Defects ferroelectric devices

Zener breakdown, active matrix displays 230 zigzag defects, ferroelectric devices 634 zinc, ligands 914,924... 

The ferroelectric hysteresis originates from the existence of irreversible polarization processes by polarization reversals of a single ferroelectric lattice cell (see Section 1.4.1). However, the exact interplay between this fundamental process, domain walls, defects and the overall appearance of the ferroelectric hysteresis is still not precisely known. The separation of the total polarization into reversible and irreversible contributions might facilitate the understanding of ferroelectric polarization mechanisms. Especially, the irreversible processes would be important for ferroelectric memory devices, since the reversible processes cannot be used to store information. 

Ferroelectric liquid crystal devices have suffered from a number of characteristic alignment defects which are absent from nematic liquid crystal devices. The most important of these, termed zig-zag defects (from their characteristic shape) result from the chevron structure (Fig. 23). The chevron can form with the layer tilt toward either of the directions perpendicular to the layer planes if there is also a surface pretilt, its direction and that of the layer tilt may... 

---