Deep-level impurities oxygen

It is well known that the electrical activity of many deep-level defects disappears when the crystal is exposed to atomic hydrogen (see Pearton et al., 1987 and Chapter 5 of this Volume). This has been attributed to complex formation with the hydrogen, and it is very common for transition-metal impurities. Unfortunately, very little theoretical work has been reported for these systems. The deactivation of second- and third-period deep-level impurities is better understood theoretically. The substitutional oxygen defect in silicon ( A center Watkins and Corbett, 1961 Corbett et al., 1961) can be deactivated by exposure to hydrogen. Recently, a theoretical study of the deactivation of substitutional sulfur through the formation of a hydrogen-sulfur pair has been reported (Yapsir etal., 1988). 

Some of the metastable centers have been associated with impurities such as oxygen (Crandall, 1981) and carbon (Crandall et al., 1983). Deep-level transient spectroscopy (DLTS) has been used to identify a center associated with oxygen that has a characteristic activation energy of 1.0 eV, whereas... 

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