Decylmagnesium bromide

Fig. 14. Schematic of the Hg drop electrode set-up and current-voltage characteristics for a Si(lll) substrate modified by a decyl monolayer (Cio) and with a clean native oxide (SiC>2). The decyl monolayer was formed by a thermal reaction of decylmagnesium bromide with H/Si(lll). The contact areas of the Hg drop were measured optically and were typically 2 X 10-3cm-2. Reprinted from [81].

Simple addition of n-decylmagnesium bromide to (7) yields an approximately equal ratio of products (8) and (9). The use of conditions which promote chelation (excess Grignard reagent) produces a shift in the pnxiuct ratio (63 37). Addition of ZnBr2 to the reaction mixture further increases the amount of chelation-controlled product formed (85 15 Table 4). 

Fig. 6.6 p-Si(lll) in 1 M decylmagnesium bromide in diethyl ether. Change of the surface from Si-H termination to Si-decyl termination on successively applying current pulses (300 oA cm", duration 1.05 xlOO ms, v/here n is pulse number, shown... 

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