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Dangling orbital

The 215-nm band may be intrinsic to sihca. This band can be produced in Coming Code 7940 glass by long-term x-ray irradiation (210). This band is attributed to an E center, which may also be observed in irradiated a-quart2. Stmcturahy, the E center is assumed to be a pyramidal SiO unit having an unpaired electron in the dangling orbital of Si (207). [Pg.510]

To a limited extent, these results support the contention that the H— 111 Si chemisorption system is simple, in that theory and experiment agree that H atoms bond to the single dangling orbital on each Si atom to... [Pg.223]

Further hydrogen adsorption causes rupture of the Si—Si bond between surface atoms with a hydrogen atom bonded to each additional dangling orbital so produced to give the dihydride phase. This is the sequence for room temperature adsorption. Thermally stimulated desorption from this dihydride phase occurs by the association of adjacent H atoms to give H2 as the desorption product, the surface phase remaining being the monohydride. Adsorption at a substrate temperature of 500 K produces only the monohydride phase, but if the substrate is cooled to room temperature in the presence of H, it is converted completely to the dihydride. [Pg.230]

Sakurai et al. [218] have used the atom probe field ion microscope [219] to make a direct study of hydride phases on silicon. Continuous field evaporation from 111 and 110 Si planes in the presence of hydrogen produced Si+, SiH+ and SiHj. Some Si atoms evaporate without forming hydrides to give Si+ SiH+ derives simply from the monohydride phase and SiHj from the dihydride. However, this latter comes from the 111 surface, whereas UPS data consistent with the presence of a dihydride came from 100 lxl. This apparent difference can be reconciled by the fact that some kink site atoms on 111 planes have two dangling orbitals per Si atom (as on 100 surfaces) and field evaporation occurs primarily at kink sites. [Pg.230]

We will now consider the open infinite chain, simulating surface formation. If the ideal hybridization condition Eq.(2.128) is satisfied, dangling orbitals with orbital energies a = as = ap appear at the end of the chain. These are the Shockley surface states, because they are strictly localized on atoms 1 and N, The solution for the general case is found by solving the secular equations for the open chain. Equations (2.123) have to be solved with bonding conditions ... [Pg.75]

Figure indicates that five-coordinated Ti has one empty dangling orbital per-... [Pg.228]

At the (110) surface, two different atoms are generated, atoms a and b (Fig. 35). Atom a loses one neighbor, resulting in a dangling orbital a symmetric into the direction perpendicular to the surface. [Pg.382]

The edge orbitals of t2g symmetry are missing 5 neighboring orbitals. This generates one (T-dangling orbital and two n symmetry orbitals, as sketched in Fig. 35. [Pg.382]


See other pages where Dangling orbital is mentioned: [Pg.6]    [Pg.248]    [Pg.379]    [Pg.390]    [Pg.391]    [Pg.133]    [Pg.224]    [Pg.225]    [Pg.227]    [Pg.228]    [Pg.229]    [Pg.229]    [Pg.231]    [Pg.276]    [Pg.278]    [Pg.236]    [Pg.11]    [Pg.87]    [Pg.90]    [Pg.104]    [Pg.228]    [Pg.382]    [Pg.124]    [Pg.537]    [Pg.148]    [Pg.151]   
See also in sourсe #XX -- [ Pg.121 ]

See also in sourсe #XX -- [ Pg.87 ]




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