CVD of Other LTS Materials

This subsection summarizes the CVD of LTS materials where only brief details of film growth and characterization have been reported. These reports include the A15 materials Nb Si, V Si, ViGe, Nb Ga, as well asTiC yNy, Wi vGey, andTa materials. 

NbiSi adopts the cubic [Cr Si] A15 structure (Fig. 2-5) with an a-axis spacing from 5.16 to 5.23 A. The CVD synthesis of superconducting Nb Si films by hydrogen reduction of niobium and silicon chloride mixtures (Eq. 2.9) has been reported by two groups 

The ViSi phase was first determined to be superconducting by Hardy and Hulm [83]. 

There is one report of the CVD synthesis of superconducting V,Si films by hydrogen reduction of vanadium and silicon tetrachloride mixtures (Eq. 2.10) [84], Supercon- 

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