Curved tunnel gate

With a curved tunnel gate (also called submarine gate or cashew gate, Figure 1.38) it is possible to position the gate on the back of the molded part where the appearance is as little affected as by the markings of the ejector pins. 

Fig. 3. Gate voltage dependence of the frequency ujq of the fundamental mode for three different values of the residual stress. Numbers are taken for the E-nanotube (see Fig. 2). The fundamental mode of an unstressed tube is 140 MHz (thin horizontal line). The inset is an enlargement of the To = 0 curve of the main figure showing step-wise increases of vn whenever an additional electron tunnels onto the tube.

---