Current-Voltage Characteristics of Exclusion Photoconductor

Current-voltage characteristics of mercury cadmium telluride exclusion devices are shown in Figs. 3.16, 3.17, 3.18. All of the presented curves are obtained for reverse bias of the isotype junction, but only the absolute values of current and voltage are shown in the diagrams. This is a convention used throughout this work. 

Current-voltage characteristics reacts in a similar manner to an increase of the v region doping (Fig. 3.17). All of the parameters in this diagram are identical to the previous one. 

For a comparison. Fig. 3.18 shows the current-voltage characteristics of an n v exclusion photoconductor at a temperature of 190 K. Several differences are readily noticeable the exclusion threshold Tcnee is much more clearly defined than in the previous case. The dynamic resistance is larger. Both of these results are a consequence of lower operating temperature. A negative properly of the presented device is that the threshold current density dramatically increases with cutoff wavelength, i.e., the consequence is similar to the case of the dopant concentration increase. 

16 Reverse current-voltage characteristics of an n v exclusion device for various inter-electrode spacing at a temperature of 270 K 

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