Cubic Substrates for Growth of GaN and Related Compounds

TABLE 1 Growth process, XRC FWHM for (002) diffraction and PL bandedge emission peak FWHM for cubic GaN epilayers published in literature so far. 

Apart from the studies on cubic epilayers, the initiation process for hexagonal GaN epilayers on GaAs (111) surfaces was also examined [29], and the structure dependence of GaN epilayers on the growth temperature was reported [30], 

For 3C-SiC substrates, not nitridation but low temperature buffer layer growth without nitridation has been used as an initial process, under the apprehension that amorphous silicon nitride layers are formed 

A (002) XRC width of 9 arcmin in 0-20 scan has been achieved for MBE grown epilayers [36], Sharp and flat interface structures have been reported using the HRTEM technique [21], For the optical properties, low temperature PL excitonic emission widths around 18 meV [4,34] and a photoreflectance (PR) spin-orbit splitting structure [36] have been reported. Concerning the electrical quality, there have been almost no reliable data, because 3C-SiC layers used as substrates are usually conductive. 

Besides the growth of cubic GaN on 3C-SiC (001) surfaces, hexagonal GaN growth on 3C-SiC (111)/Si (111) substrates has also been examined [37], 

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H. Okumura [ Datareview in this book B2.6 Cubic substrates for growth of GaN and related compounds ]... 

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