Crystallographic growth orientations

Fig. 7 Effect of crystallographic growth orientation on friction performance of CVD diamond films.

In conclusion, it seems that for both the AP-CVD and the LP-CVD processes, deposition parameters have been found, for which the introduction of a dopant component does not significantly perturb the crystallographic orientation of the ZnO films. However, it is, at this stage, not possible to identify the mechanisms and critical parameters governing the influence of dopants on film structure. Nevertheless, some speculative statements can be made in the case of the AP-CVD process, the deposition temperature seems to be the critical factor, i.e., above 400°C the growth orientation of ZnO films is no more perturbed by the introduction of a dopant. For the LP-CVD... 

A certain anisotropy of the refractive index along specific crystallographic axes indicates that the microstructures in the porous network are not spherical but somewhat elongated along the PS growth direction [Mi4], This birefringence is below 1% for micro PS, while it may reach values in the order of 10% for meso PS films formed on (110) oriented silicon wafers [Ko22]. 

Also, Kolb and coworkers [468] have studied initial stages of Co deposition on Au(lll) and Au(lOO) using CV and STM. Depending on the crystallographic orientation of the substrate and electrochemical properties, either three- or two-dimensional growth has been observed. The influence of surface reconstruction on the nucleation and growth behavior has also been discussed. 

---