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Crossed NW FETs

Figure 11.10. NW smart pixels, (a) Schematic of an integrated crossed NW FET and LED and the equivalent circuit, (b) Shows SEM image of a representative device, (c) Plots of current and emission intensity of the nanoLED as a function of voltage apphed to the NW gate at a fixed bias of -6V. (d) EL intensity versus time relation when a voltage applied to NW gate is switched between 0 and +4V for a fixed bias of -6V. [Reprinted with permission from Ref. 59. Copyright 2005 Wiley-VCH Verlag.]... Figure 11.10. NW smart pixels, (a) Schematic of an integrated crossed NW FET and LED and the equivalent circuit, (b) Shows SEM image of a representative device, (c) Plots of current and emission intensity of the nanoLED as a function of voltage apphed to the NW gate at a fixed bias of -6V. (d) EL intensity versus time relation when a voltage applied to NW gate is switched between 0 and +4V for a fixed bias of -6V. [Reprinted with permission from Ref. 59. Copyright 2005 Wiley-VCH Verlag.]...
Nanoscale FETs can also be achieved in the crossed NW configuration using one NW as the active conducting channel and another crossed NW as... [Pg.358]

See other pages where Crossed NW FETs is mentioned: [Pg.359]    [Pg.360]    [Pg.361]    [Pg.372]    [Pg.359]    [Pg.360]    [Pg.361]    [Pg.372]    [Pg.360]    [Pg.360]    [Pg.363]   
See also in sourсe #XX -- [ Pg.359 ]



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