Copper CMP Pattern Dependence

1 Dishing Dependency on Feature Size and Pattern Density 

FIGURE 4.11 Dishing versus (a) linewidth and (b) pattern density. 

FIGURE 4.12 Surface profiles of a polished structure (20 am linewidth, PD = 50%) at different polish times. 

FIGURE 4.13 Dishing of different linewidths at different polish times. 

FIGURE 4.14 Surface profiles of a structure (PD = 20%) polished by slurry with different oxidizer concentrations. 

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