Contacts to Porous SiC

In this section, we will discuss our studies on the electrical properties of nickel contacts formed on porous SiC layer via current-voltage (/—V) and capacitance-voltage (C-V) characterization. 

It is interesting to note that the forward bias I-V curve of the Ni/por-SiC/SiC structure shows a negative resistance region starting from 60 V, where the 7-V characteristic has a current peak of 17 mA. The current decays as the forward voltage increases to 250 V, after which, the current remains practically constant ( 8 mA) up to 500-550 V, where a forward breakdown takes place. 

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