Conductivity Control of Nonpolar GaN

To apply nonpolar nitrides to devices such as high-electron-mobility transistors and UV emitters/detectors, AlGaN is an essential material. However, when AlGaN is grown on GaN, cracks are generated by tensile stress when the layer 

MOVPE growth, electrical conductivity control, heterostructure, and LED performance of the nonpolar nitrides were overviewed. Taking into account 

The authors would like to thank Akira Honshio, Hideto Miyake, Hiroko Furukawa, Yoshizane Okadome, Yosuke Tsuchiya, Michinobu Tsuda, and Tetsuya Takeuchi for their great contributions to the experiments. 

Maruska, H.P. andTietjen, J.J. (1969) Applied Physics Letters, 15, 327. Takeuchi, T., Amano, H., and Akasaki, I. 2000) Japanese Journal of Applied Physics, 39, 413. 

Bernadini, F., Fiorentini, V., and Vanderbilt, D. (1997) Physical Review B, 56, R10024. 

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