Conductance band

The sensitive layer of the systems under investigation eonsists of a mixture of BaFBr with Eu dotation. Other systems are available in the mean time too. X-ray- or y-quants initiate transitions of electrons in the crystal lattice. Electrons are excited from the valence band to the conduction band [2]. Electrons from the conduction band are trapped in empty Br -lattice places. They can return to the valence band via the conduction band after an excitation by... 

The occupied bands are called valence bands the empty bands are called conduction bands. The top of tire valence band is usually taken as energy zero. The lowest conduction band has a minimum along the A direction the highest occupied valence band has a maximum at F. Semiconductors which have the highest occupied k -state and lowest empty state at different points are called indirect gap semiconductors. If k = k, the semiconductor is call direct gap semiconductor. Gennanium is also an indirect gap semiconductor whereas GaAs has a direct gap. It is not easy to predict whether a given semiconductor will have a direct gap or not. 

Electronic and optical excitations usually occur between the upper valence bands and lowest conduction band. In optical excitations, electrons are transferred from the valence band to the conduction band. This process leaves an empty state in the valence band. These empty states are called holes. Conservation of wavevectors must be obeyed in these transitions + k = k where is the wavevector of the photon, k is the... 

Semiconductors are poor conductors of electricity at low temperatures. Since the valence band is completely occupied, an applied electric field caimot change the total momentum of the valence electrons. This is a reflection of the Pauli principle. This would not be true for an electron that is excited into the conduction band. However, for a band gap of 1 eV or more, few electrons can be themially excited into the conduction band at ambient temperatures. Conversely, the electronic properties of semiconductors at ambient temperatures can be profoundly altered by the... 

Under the assumption that the matrix elements can be treated as constants, they can be factored out of the integral. This is a good approximation for most crystals. By comparison with equation Al.3.84. it is possible to define a fiinction similar to the density of states. In this case, since both valence and conduction band states are included, the fiinction is called the joint density of states ... 

For a given pair of valence and conduction bands, there must be at least one and one critical points and at least tluee and tluee critical points. However, it is possible for the saddle critical points to be degenerate. In the simplest possible configuration of critical points, the joint density of states appears as m figure Al.3.19. 

The Fenni energy p which is the difference in energy between the bottom of the conduction band and... 

The occupation of each tetraliedral and octaliedral site in tliese regularly oriented arrays of cavities by, for example, alkali atoms results in tire transfer of a single electron to tire fullerene s conduction band (ti ) [58]. Consequently,... 

Figure C1.5.12.(A) Fluorescence decay of a single molecule of cresyl violet on an indium tin oxide (ITO) surface measured by time-correlated single photon counting. The solid line is tire fitted decay, a single exponential of 480 5 ps convolved witli tire instmment response function of 160 ps fwiim. The decay, which is considerably faster tlian tire natural fluorescence lifetime of cresyl violet, is due to electron transfer from tire excited cresyl violet (D ) to tire conduction band or energetically accessible surface electronic states of ITO. (B) Distribution of lifetimes for 40 different single molecules showing a broad distribution of electron transfer rates. Reprinted witli pennission from Lu andXie [1381. Copyright 1997 American Chemical Society.

In an intrinsic semiconductor, tlie conductivity is limited by tlie tlieniial excitation of electrons from a filled valence band (VB) into an empty conduction band (CB), across a forbidden energy gap of widtli E. The process... 

Thermocouples, bolometers and pyroelectric and semiconductor detectors are also used. The first three are basically resistance thermometers. A semiconductor detector counts photons falling on it by measuring the change in conductivity due to electrons being excited from fhe valence band info fhe conduction band. 

Figure 9.8(a) shows how the conduction band C and the empty valence band V are not separated in a conductor whereas Figure 9.8(c) shows that they are well separated in an insulator. The situation in a semiconductor, shown in Figure 9.8(b), is that the band gap, between the conduction and valence bands, is sufficiently small that promotion of electrons into the conduction band is possible by heating the material. For a semiconductor the Fermi energy E, such that at T= 0 K all levels with E < are filled, lies between the bands as shown. 

Semiconductors may also be made from a maferial which is normally an insulator by infroducing an impurify, a process known as doping. Figure 9.9 shows fwo ways in which an impurify may promote semiconducting properties. In Figure 9.9(a) fhe dopanf has one more valence election per atom fhan fhe hosf and confribufes a band of filled impurify levels 1 close to fhe conduction band of fhe hosf. This characterizes an n-fype semiconductor. An example is silicon (KL3s 3p ) doped wifh phosphoms (KL3s 3p ), which reduces fhe band gap to abouf 0.05 eY Since kT af room femperafure is abouf 0.025 eY the phosphoms... 

Figure 9.8 Conduction band, C, and valence band, V, in (a) a conductor, (b) a semiconductor and (c) an insulator...

Figure 9.9 Impurity levels I in (a) an n-type and (b) a p-type semiconductor C is the conduction band and V the valence band...

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