Vapor chemical

Viswanathan R, Thompson D L and Raff L M 1984 Theoretical investigations of elementary processes in the chemical vapor deposition of silicon from silane. Unimolecular decomposition of SiH J. Chem. Phys. 80 4230 0... 

Jensen K F and Kern W 1991 Thermal chemical vapor deposition Thin Film Processes II ed J L Vossen and W Kern (San Diego, CA Academic) chapter III-1, pp 283-368... 

Any commercially available vacuum pump is perfectly fine for the underground chemist s needs but the best kind to buy is a diaphragm pump, which is more resistant to the often-harsh chemical vapors that are sucked through it. Most vacuum pumps cost about 100- 200. However, the stronger the vacuum the better. If a chemist is looking to pull 1mm of Hg (don t ask) like the girls in the chemistry papers do then she can be looking at a turbovac that can run well over 5000. 

Metal organic chemical vapor deposition pOCVD)... 

PECVD. See Plasma-enhanced chemical vapor deposition. 

Si02, BaTiO capacitors sol—gel, sputtering, chemical vapor deposition (CVD)... 

Vapor-Phase Mechanisms. Phosphoms flame retardants can also exert vapor-phase flame-retardant action. Trimethyl phosphate [512-56-1] C H O P, retards the velocity of a methane—oxygen flame with about the same molar efficiency as antimony trichloride (30,31). Both physical and chemical vapor-phase mechanisms have been proposed for the flame-retardant action of certain phosphoms compounds. Physical (endothermic) modes of action have been shown to be of dominant importance in the flame-retardant action of a wide range of non-phosphoms-containing volatile compounds (32). 

Physical or chemical vapor-phase mechanisms may be reasonably hypothesized in cases where a phosphoms flame retardant is found to be effective in a noncharring polymer, and especially where the flame retardant or phosphoms-containing breakdown products are capable of being vaporized at the temperature of the pyrolyzing surface. In the engineering of thermoplastic Noryl (General Electric), which consists of a blend of a charrable poly(phenylene oxide) and a poorly charrable polystyrene, experimental evidence indicates that effective flame retardants such as triphenyl phosphate act in the vapor phase to suppress the flammabiUty of the polystyrene pyrolysis products (36). 

Fluorination of tungsten and rhenium produces tungsten hexafluoride, WF, and rhenium hexafluoride [10049-17-9J, ReF, respectively. These volatile metal fluorides are used in the chemical vapor deposition industry to produce metal coatings and intricately shaped components (see Thin films,... 

Germanium difluoride can be prepared by reduction (2,4) of GeF by metallic germanium, by reaction (1) of stoichiometric amounts of Ge and HF in a sealed vessel at 225°C, by Ge powder and HgF2 (5), and by GeS and PbF2 (6). Gep2 has been used in plasma chemical vapor deposition of amorphous film (see Plasma TECHNOLOGY Thin films) (7). 

Molybdenum hexafluoride is used in the manufacture of thin films (qv) for large-scale integrated circuits (qv) commonly known as LSIC systems (3,4), in the manufacture of metallised ceramics (see MetaL-MATRIX COMPOSITES) (5), and chemical vapor deposition of molybdenum and molybdenum—tungsten alloys (see Molybdenumand molybdenum alloys) (6,7). The latter process involves the reduction of gaseous metal fluorides by hydrogen at elevated temperatures to produce metals or their alloys such as molybdenum—tungsten, molybdenum—tungsten—rhenium, or molybdenum—rhenium alloys. 

Rhenium hexafluoride is used for the deposition of rhenium metal films for electronic, semiconductor, laser parts (6—8), and in chemical vapor deposition (CVD) processes which involve the reduction of ReF by hydrogen at elevated (550—750°C) temperatures and reduced (<101.3 kPa (1 atm)) pressures (9,10). 

J. E. J. Schmit2, Chemical Vapor Deposition of Tungsten andTungsten Silicidesfor VESI FJESI Applications, Noyes PubHcations, Park Ridge, N.J., 1992. 

N. J. Archer, Proceedings Conference Chemical Vapor Deposition, 5th International Conference, Electrochemical Society, Princeton, N.J., 1975. 

High process temperatures generally not achievable by other means are possible when induction heating of a graphite susceptor is combined with the use of low conductivity high temperature insulation such as flake carbon interposed between the coil and the susceptor. Temperatures of 3000°C are routine for both batch or continuous production. Processes include purification, graphitization, chemical vapor deposition, or carbon vapor deposition to produce components for the aircraft and defense industry. Figure 7 illustrates a furnace suitable for the production of aerospace brake components in a batch operation. 

Fig. 21. Schematic illustration of the four primary vapor-phase deposition processes used in optical-fiber fabrication outside vapor deposition (OVD), modified chemical vapor deposition (MCVD), plasma vapor deposition (PVD), and vapor axial deposition (VAD) (115).

Aluminum. Some manufacturers also have WORM disks above 5.25 in. on offer with aluminum as substrate material. Eor A1 the same advantages apply as for glass with the exception of a high coefficient of thermal expansion and lacking resistance to aggressive chemical vapors and Hquids. 

Silicon Epitaxy. A critical step ia IC fabricatioa is the epitaxial depositioa of sdicoa oa an iategrated circuit. Epitaxy is defined as a process whereby a thin crystalline film is grown on a crystalline substrate. Silicon epitaxy is used ia bipolar ICs to create a high resistivity layer oa a low resistivity substrate. Most epitaxial depositioas are doae either by chemical vapor depositioa (CVD) or by molecular beam epitaxy (MBE) (see Thin films). CVD is the mainstream process. 

Diffusion. Another technique for modifying the electrical properties of siUcon and siUcon-based films involves introducing small amounts of elements having differing electrical compositions, dopants, into substrate layers. Diffusion is commonly used. There are three ways dopants can be diffused into a substrate film (/) the surface can be exposed to a chemical vapor of the dopant at high temperatures, or (2) a doped-oxide, or (J) an ion-implanted layer can be used. Ion implantation is increasingly becoming the method of choice as the miniaturization of ICs advances. However, diffusion is used in... 

Deposition of Thin Films. Laser photochemical deposition has been extensively studied, especially with respect to fabrication of microelectronic stmctures (see Integrated circuits). This procedure could be used in integrated circuit fabrication for the direct generation of patterns. Laser-aided chemical vapor deposition, which can be used to deposit layers of semiconductors, metals, and insulators, could define the circuit features. The deposits can have dimensions in the micrometer regime and they can be produced in specific patterns. Laser chemical vapor deposition can use either of two approaches. 

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