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Charge injection mechanisms, comparison

FIGURE 2.4.4 Comparison of different charge injection mechanisms at a biased metal-semiconductor contact (a) thermionic emission, (b) field emission (tnnneling), (c) defect assisted injection. [Pg.144]

See other pages where Charge injection mechanisms, comparison is mentioned: [Pg.427]    [Pg.143]    [Pg.451]    [Pg.228]    [Pg.188]    [Pg.247]    [Pg.63]    [Pg.420]    [Pg.1588]    [Pg.35]    [Pg.174]    [Pg.308]    [Pg.416]    [Pg.322]    [Pg.323]    [Pg.375]    [Pg.110]    [Pg.297]    [Pg.141]    [Pg.46]    [Pg.498]   
See also in sourсe #XX -- [ Pg.144 ]



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