Carbon doping layers, GaAs

Fig. 4.19 Carbon in GaAs with carbon doping layers of 8 x lO atoms/cm is profiled with two different beam energies and angles of incidence in a Cameca IMS 3f. By switching polarity of the secondary ions from -4.5 to +4.5 kV with a primary beam voltage of 12.5 kV, the impact energy switches from 17 to 8 keV and the angle from 25° to 39° with significant improvement in depth resolution at the lower impact energy...

In the context of surface science, NC-AFM has been developed in several major directions. The detailed atomic resolution analysis of semiconductors has been studied for several prototype systems including the clean Si(lll) surface [156-161], the clean Ge(lll) surface [162], the clean GaAs(OOl) surface [163], the clean InAs(llO) surface [164, 165], as well as various adsorbate covered and doped semiconductor surfaces [165-169]. Graphite [170, 171] and other carbon-based systems [172, 173] and even solid noble gas layers [174] have also been studied. 

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