Burstein-Moss shift

As the treated ITO samples show comparably high effective band gaps, we draw a conclusion as the following. A combination of Burstein-Moss-Shift and contributions of scattering [11] causes the increased Eg. It is not only a reason of Burstein-Moss-Shifl like Bender et al mentioned [13]. Eg = Eg q + AEg = Eg o + "R (37t nJ + fiZ, Where Eg... 

The optical properties were further studied by Nishino et al. [217], and Hu and Gordon [209, 210, 240], They observed an increase in the optical band gap (3.3-3.7 eV) with increasing doping, which can be explained again by the Burstein-Moss shift [128, 129]. The refractive index of ZnO films was in the range of 1.54-2.02 [234]. 

ESR of pristine ZnO nanoparticles in vacuum before and after UV illumination and subsequently after exposure to air. Change in resistance to Ohmic behavior for a ZnO/PEDOT PSS junction upon UV exposure. Burstein-Moss effect (blue shift) occurs upon UV illumination by emptying the valence band and filling the conduction band. Adapted with permission from ref. 104. Copyright 2007, AIP Publishing EEC. Adapted with permission from ref. 105. Copyright (2010) American Chemical Society. 

Bandgap measurements for Cu sulphides and selenides are complicated by the fact that these semiconductors are normally degenerate, with high free-carrier absorption in the near-infrared and possible Moss-Burstein shifts (due to saturation of the top of the valence band by holes) in the optical gap. It is quite possible that variations in bandgaps in these materials are due to differences in stoichiometry, phase, and doping rather than to any quantum size effect. Only studies where crystal size can be estimated and are possibly in the quantum size range are given here. 

---