Bubble formation of silicon carbide

15 Bubbles formed in Si02 layer at high temperature oxidation of CVD SiC at 1990 K. 

16 Time dependence of mass gain for CVD SiC with bubble formation. 

77 Effects of temperature and Pqj on the condition between passive oxidation and bubble formation. 

Jacobson N S, Corrosion of silicon-based ceramics in combnstion environments , J Am Ceram Soc, 1993 76(1) 3-28. 

Schlicting J, Chemical vapor-deposition of siUcon-carbide , Powder Metall Int, 1980 12(4) 196-200. 

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