BSCCO Films by CVD Using Fluorinated Metal-Organic Precursors

2 BSCCO Films by CVD Using Fluorinated Metal-Organic Precursors 

Nemoto et al. at Nissan reported the first CVD growth of BSCCO films using fluorocarbon-based chelates [240]. Triphenyl bismuth and the hexafluoroacetylacetonato complexes of Sr, Ca, and Cu were used as precursors in oxygen at a 20 Torr system pressure with a substrate temperature of 600°C to give amorphous, insulating films. After an air anneal at 830°C for 1 h, the films were c-axis oriented Bi-2212 with 7(. = 50 K. Researchers at Advanced Technology Materials deposited amorphous BSCCO(F) films at 500 °C under 2 Torr pressure using the fluorinated complexes Ca(fod)2, Sr(fod)2, and Cu(hfa)2 as well as Bi(ph)3 as precursors [241]. Fluorine was 

Substrate outdiffusion was believed to cause the observed degradation in properties for the films on NdGaO (100) versus those on LaAIO (100). In addition, microcracking of BSCCO on NdGaOi (100) films (presumably due to lattice mismatch) was observed when film thicknesses exceeded 0.2 pm. 

The synthesis of fluorinated, volatile bismuth )3-diketonates for MOCVD was reported in a recent submission by Sievers et al. [243]. Bi(fod),i was isolated and characterized to be sufficiently volatile for CVD growth of bismuth films although no BSCCO film growth has yet been demonstrated. This report also provides an excellent survey of volatile bismuth metal-organic and organometallic precursor chemistry. 

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